- Stats
- USPTO
- TC 2800
- Group 28XX
Group 28XX — Semiconductors B
Art Units in Group 28XX
| Art Unit |
Description |
3YGR |
| 2836 |
Electrical transmission or interconnection systems |
88% |
| 2851 |
Computer-aided design and analysis of circuits and semiconductor masks |
91% |
| 2874 |
Optical waveguides |
87% |
| 2891 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
87% |
| 2892 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
88% |
| 2893 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
87% |
| 2897 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
91% |
| 2898 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
83% |
| 2899 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
90% |
Histogram of Examiner Grant Rates
Below is a weighted histogram (by number of cases) of the 3-year grant rates of the examiners in Group 28XX. The average is 88% and the standard deviation is 10%.
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Comparison with TC 2800
Group 28XX's grant rate is higher than that of TC 2800 and higher than that of the USPTO.
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Grant Rate Timeline
Below is the grant rate timeline for Group 28XX, where the timeline is relative to the date of the first office action. The three-year grant rate is the percentage of applications granted at three years after the first office action.
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Disclaimer: We do not provide any guarantees as to the accuracy of the statistics presented above and under
no circumstances will we be liable for any outcome resulting from your reliance on the above statistics.
