- Stats
- USPTO
- TC 2800
- Group 2810-2820
Group 2810-2820 — Semiconductors A/Memory
Art Units in Group 2810-2820
| Art Unit |
Description |
3YGR |
| 2811 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
80% |
| 2812 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
90% |
| 2813 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
90% |
| 2814 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
85% |
| 2815 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
78% |
| 2817 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
91% |
| 2818 |
Active solid-state devices (e.g., transistors, solid-state diodes) |
92% |
| 2824 |
Static information storage and retrieval |
95% |
| 2825 |
Static information storage and retrieval |
90% |
| 2827 |
Static information storage and retrieval |
96% |
| 2828 |
Coherent light generators |
81% |
Histogram of Examiner Grant Rates
Below is a weighted histogram (by number of cases) of the 3-year grant rates of the examiners in Group 2810-2820. The average is 89% and the standard deviation is 11%.
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Comparison with TC 2800
Group 2810-2820's grant rate is higher than that of TC 2800 and higher than that of the USPTO.
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Grant Rate Timeline
Below is the grant rate timeline for Group 2810-2820, where the timeline is relative to the date of the first office action. The three-year grant rate is the percentage of applications granted at three years after the first office action.
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Disclaimer: We do not provide any guarantees as to the accuracy of the statistics presented above and under
no circumstances will we be liable for any outcome resulting from your reliance on the above statistics.
