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| Art Unit: | 2824 — Static information storage and retrieval |
|---|---|
| Group: | 2810-2820 — Semiconductors A/Memory |
| Classes: |
365 — Static information storage and retrieval 257 — Active solid-state devices (e.g., transistors, solid-state diodes) 711 — Electrical computers and digital processing systems: memory 708 — Electrical computers: arithmetic processing and calculating 707 — Data processing: database and file management or data structures 706 — Data processing: artificial intelligence 703 — Data processing: structural design, modeling, simulation, and emulation 716 — Computer-aided design and analysis of circuits and semiconductor masks |
| Phone: | (571) 272-7612 |
| Email: | jerome.leboeuf@uspto.gov |
| Location: | VA 22314 |
| Title: | Pat Examnr Elctrl Engrg |
| Service: | 12 years |
| Grade: | GS-14 |
| 3-Year Grant rate: | 86% over 331 cases |
|---|---|
| Difficulty: | Easier |
| Difficulty Percentile: | 30th
|
With Examiner Leboeuf, you have a 86% chance of getting an issued patent by 3 years after the first office action. Examiner Leboeuf is an easier examiner and in the 30th percentile across all examiners (with 100th percentile most difficult).
Below is the grant rate timeline for Examiner Leboeuf, where the timeline is relative to the date of the first office action. The three-year grant rate is the percentage of applications granted at three years after the first office action.
Examiner Leboeuf's grant rate is lower than that of Art Unit 2824 and higher than that of the USPTO.
| Average Office Actions Per Grant | |
|---|---|
| Examiner Leboeuf | 1.4 |
| Art Unit 2824 | 1.0 |
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Disclaimer: We do not provide any guarantees as to the accuracy of the statistics presented above and under
no circumstances will we be liable for any outcome resulting from your reliance on the above statistics.